Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.
TING TING LIANG1, AI QIN WANG1,* , HAI LI ZHAO2, JING PEI XIE3
Mo thin films were deposited on glass and silicon substrate s using DC magnetron sputtering at different s puttering time respectively . Their morphological, structural and electrical p ropert ies were investigated. The result s show that Mo films present crystal plane orientation a long ( direction . And the grain size s increas e w ith the increas e of sputtering t ime . In addition, the sheet resistance and resistivity of Mo films show a first decreas e and then increas e relationship with the increas e of sputtering time . Particularly, when the sputtering time is 2 5 min, the resistivit y of Mo film deposited on glass is lowest in this experiment, 12.33 µΩ•cm..
Mo thin films, S puttering time, Substrates, Properties.
TING TING LIANG, AI QIN WANG, HAI LI ZHAO, JING PEI XIE, Effect of sputtering time on Mo thin films deposited on different substrates using DC magnetron sputtering, Optoelectronics and Advanced Materials - Rapid Communications, 11, 9-10, September-October 2017, pp.574-579 (2017).
Submitted at: Dec. 5, 2016
Accepted at: Oct. 10, 2017
Optoelectronics and Advanced Materials - Rapid Communications
(2022): 0.5 - 2022 Journal Citation Reports (Clarivate Analytics, 2023)
Active accounts were imported to the new platform and assigned a random password by default. In order to access your account you need to access the login page and go through the Lost Password dialog (involves the system sending you an email with instructions) in order to reset your password. This step is necessary as passwords are kept in hashed form and the new platform uses modern hashing algorithms incompatible with the previous ones.