Abstract
The strong ultraviolet stimulated emission and the weak deep energy level emission was obtained at room temperature. The mechanisms of sputtering pressure impact on growth of ZnO films was also discussed. The low energy tail emission of ultraviolet photoluminescence was caused by the emission of bound exciton. The effect of sputtering pressure on the growth of films were observed. The structural property and photoluminescence performance were studied at different pressures. ZnO films by magnetron sputtering on glass substrates were fabricated with XRD FWHM of only 0.12° exhibiting preferred orientation along c-axis growth at the proper substrate temperature and sputtering pressure..
Keywords
ZnO films, Photoluminescence, Radio-frequency magnetron sputtering, Preferential c-axis growth.
Citation
GUANFANG ZHU, PENGPENG GAO, YIFAN KANG, LIU JING, HEBAO YAO, CHAO WANG, Effect of substrate temperature and sputtering pressure on the microstructure and photoluminescence performance of ZnO films by magnetron sputtering, Optoelectronics and Advanced Materials - Rapid Communications, 11, 11-12, November-December 2017, pp.709-715 (2017).
Submitted at: March 7, 2017
Accepted at: Nov. 28, 2017