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Effect of various pseudomorphic AlN layer insertions on the electron densities of two-dimensional electron gas in lattice-matched In0.18Al0.82N/GaN based heterostructures

S. B. LISESIVDIN1,* , E. OZBAY1,2

Affiliation

  1. Nanotechnology Research Center, Bilkent University, Bilkent, 06800 Ankara, Turkey
  2. Department of Physics, Bilkent University, Bilkent, 06800 Ankara, Turkey; and Department of Electrical and Electronics Engineering, Bilkent University, Bilkent, 06800 Ankara, Turkey

Abstract

We explored the effects of various pseudomorphic AlN layer insertions in lattice-matched In0.18Al0.82N/GaN based heterostructures on band structures and carrier densities with the help of one-dimensional self-consistent solutions of nonlinear Schrödinger-Poisson equations. According to the calculations, important increase in carrier density is expected with an increasing number of AlN insertions in In0.18Al0.82N barrier. The effect of the position of an AlN layer in In0.18Al0.82N barrier is also investigated. An additional AlN layer insertion in the GaN layer is calculated in detail with the help of an experimental point of view, in which the possible effects on both carrier density and mobility are discussed.

Keywords

AlInN, InAlN, HEMT, Schrödinger, Poisson, 2DEG, Heterostructure.

Citation

S. B. LISESIVDIN, E. OZBAY, Effect of various pseudomorphic AlN layer insertions on the electron densities of two-dimensional electron gas in lattice-matched In0.18Al0.82N/GaN based heterostructures, Optoelectronics and Advanced Materials - Rapid Communications, 3, 9, September 2009, pp.904-909 (2009).

Submitted at: Sept. 9, 2009

Accepted at: Sept. 15, 2009