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P. GOGOI1,* , K. KONWAR1, B. BAISHYA1
TFTs having Ge as active material have been fabricated with rare earth oxides Nd2O3, Dy2O3, Eu2O3 and La2O3 as gate insulator. All the TFTs are fabricated in staggered electrode structure on perfectly cleaned glass substrates using thermal evaporation process under high vacuum. Effect of different working temperature on the TFT’s characteristics has been observed and reported.
Ge TFTs, Rare earth oxides, Working temperature.
P. GOGOI, K. KONWAR, B. BAISHYA, Effect of working temperature on Ge-Nd2O3, Ge-Dy2O3, Ge-Eu2O3 and Ge-La2O3 TFTs, Optoelectronics and Advanced Materials - Rapid Communications, 4, 5, May 2010, pp.665-667 (2010).
Submitted at: May 9, 2010
Accepted at: May 20, 2010
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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