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D. K. TAKCI1, E. SENADIM TUZEMEN2,* , S. YILMAZ1, R. ESEN1
The effects of Al concentration on XPS, Raman, Hall and photovoltaic properties of Al-doped ZnO films were investigated onto Si (100) substrate by pulsed filtered cathodic vacuum arc deposition (PFCVAD) system, at room temperature. The Al doping effects in ZnO was performed by Raman measurements. The chemical state of ZnO:Al (AZO) films on Si substrate was investigated by using X-ray photoelectron spectroscopy (XPS). Hall Effect measurements were applied to characterize the electrical properties. Effect of doping concentration on photovoltaic property was also studied..
Al doped ZnO, Photovoltaic property, Pulsed filtered cathodic vacuum arc deposition.
D. K. TAKCI, E. SENADIM TUZEMEN, S. YILMAZ, R. ESEN, Effects of Al concentration on photovoltaic property of ZnO:Al/p-type Si by pulsed filtered cathodic vacuum arc deposition system, Optoelectronics and Advanced Materials - Rapid Communications, 9, 11-12, November-December 2015, pp.1549-1556 (2015).
Submitted at: Oct. 19, 2014
Accepted at: Oct. 28, 2015
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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