"

Cookies ussage consent

I agree.

Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.

Effects of defect density and back contacts on the performance of Cu2O/TiO2 thin film solar cell

A. K. BISWAS1,* , S. BISWAS2, S. S. BISWAS3

Affiliation

  1. Department of Physics, NabadwipVidyasagar College, Nabadwip, Nadia-741302, West Bengal, India
  2. Department of Physics, Fulia Sikshaniketan Govt. Sponsored School, Santipur, Nadia, West Bengal, India
  3. Department of Physics, Surendranath College, 24/2, M. G. Road, Kolkata-700009, West Bengal, India

Abstract

Defects in various layers of solar cells play an important role in determining the characteristics of such devices. Different types of defects such as acceptor type in Cu2O layer, donor type in TiO2 layer and neutral type on the interface (Cu2O/TiO2) have been considered to simulate the proposed solar cell with the help of SCAPS-1D software. Results obtained from this simulation show that output parameters like short circuit current density (JSC), open circuit voltage (VOC), fill factor (FF) and power conversion efficiency (PCE) significantly depend on the defect density and its properties. Appropriate selection of defect density of corresponding layers may improve the device performance. Moreover, different back contact metals (Cu, Ag, Fe, Nb, Mo, Ni, Au, Pt) have been taken step by step during simulation for understanding the effects of such back contacts. It is observed that solar cell gives better results when Ni (5.22 eV) acts as back contact.

Keywords

Defect density, Interface, Work function, Solar cell, Heterojunction.

Citation

A. K. BISWAS, S. BISWAS, S. S. BISWAS, Effects of defect density and back contacts on the performance of Cu2O/TiO2 thin film solar cell, Optoelectronics and Advanced Materials - Rapid Communications, 20, 1-2, January-February 2026, pp.62-68 (2026).

Submitted at: April 10, 2025

Accepted at: Feb. 2, 2026