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JIAN FANG HE1, SHU YUN WANG1,*
A series of Ta(5nm)/Ni 81 Fe 19 (20 nm)/Ta(3nm) and (Ni 81 Fe 19 1 x Cr x (5nm)/Ni 81 Fe 19 (20nm)/Ta(3nm) Ni 81 Fe 19 magnetic ultra thin films were prepared by magnetron sputtering method under different temperature. Effects of substrate temperature and buffer layer on the anisotropic magnetoresi stance (AMR) of Ni81 Fe19 thin films had been investigated The grain size and grain orientation were analyzed by X ray diffraction. AMR value of Ni81 Fe19 ultra thin films were measured by Four point probe technology. The buffer layer of Cr atoms in the per centage content was determined by EDS Surface morphology of the samples was measured by AFM The results showed that Substrate temperature and buffer layer have significant effects on anisotropic magnetoresistance. With the rise of substrate temperature, AMR value increases increases. The Ni 81 Fe 19 films were prepar ed at the substrate temperature of 400 shows the highest AMR value. When the substrate temperatures are higher than 400 ℃, as the substrate temperature gets up, the values become stable. With the buffer layer thickness increased, AMR values go up. It has a topped peak 3.67% when the thickness reaches 4nm. Once the thickness is greater than 4nm, AMR values decrease. The AMR value of Ni 81 Fe19Ultra thin Films with NiFeCr as the buffer layer was significantly greater than the samples with Ta as the buffer layer When the thickness of Ni81Fe19Cr buffer layer is about 4nm and the buffer layer of Cr atoms in the percentage content is 32% the maximum anisotropic magnetoresistance (AMR) value reaches 3.67% and the maximum grain size is 23.1nm..
Ni81Fe19 thin films, Buffer layer, Ultra-thin, Anisotropic magnetoresistance, Magnetron sputtering.
JIAN FANG HE, SHU YUN WANG, Effects of substrate temperature and buffer layer on the anisotropic magnetoresistance of Ni81 Fe19 ultra thin films, Optoelectronics and Advanced Materials - Rapid Communications, 6, 1-2, January-February 2012, pp.165-168 (2012).
Submitted at: Dec. 15, 2011
Accepted at: Feb. 20, 2012
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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