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ALAA J. GHAZAI1,* , H. ABU HASSAN1, Z. HASSAN1, A. SH HUSSEIN1
Schottky behavior of Pt contacts on nanostructure Al0.08In0.08Ga0.84N thin film grown by molecular beam epitaxy (MBE) technique on sapphire substrate were investigated extensively at annealing temperatures range of 300-600 ºC. The temperature dependence and structural properties of the Schottky barrier heights (SBH) of Pt contacts were characterized using X-ray diffraction (XRD), atomic force microscopy (AFM) and current-voltage (I-V) measurements. XRD result showed there is no phase change observed on Pt contact with change the annealing temperature. The temperature dependence of the SBH is attributed to the change of the surface morphology of Pt films and variation of the interface of the samples. The results revealed that the high quality Schottky contact with a SBH and ideality factor of 0.76 and 1.03 respectively can be obtained under 30 minutes annealing at 400 ºC in N2 ambience..
Quaternary AlInGaN, Schottky contacts, Pt, Annealing temperature, SBH.
ALAA J. GHAZAI, H. ABU HASSAN, Z. HASSAN, A. SH HUSSEIN, Effects of thermal annealing of Pt Schottky contacts on quaternary n-Al0.08In0.08Ga0.84N thin film, Optoelectronics and Advanced Materials - Rapid Communications, 6, 1-2, January-February 2012, pp.324-326 (2012).
Submitted at: Oct. 27, 2011
Accepted at: Feb. 20, 2012
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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