Abstract
Single crystalline molybdenum vanadate nanowires (MoV2O8) were grown on silicon substrates by a simple thermal
annealing of spin coa ted film in the air. The nanowires grown by this method have an average diameter of 100 nm and
length between 1 5μm. The nanowires show decent field emission current densities with a turn on field of ~1.9 V/μm and
good emission stability. The four termina l electrical resistivity of a single nanowire was measured to be 70 Ωcm . Thus, we
expect that MoV2O8 will be useful as material for future field emitters..
Keywords
MoV2O8 nanowires, Field emission, Electrical measurement.
Citation
IMRAN SHAKIR, MUHAMMAD SHAHID, MANSOOR SARFRAZ, MUHAMMAD FAROOQ WARSI, Electrical and field emission properties of single crystalline MoV2O8 nanowires, Optoelectronics and Advanced Materials - Rapid Communications, 8, 7-8, July-August 2014, pp.751-753 (2014).
Submitted at: June 2, 2014
Accepted at: July 10, 2014