Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.
HOGYOUNG KIM1,*
The effect of interfaces states in Ag Schottky contacts on Zn-polar and O-polar bulk ZnO was investigated using current– voltage (I–V) measurements. Compared with Zn-polar ZnO, the barrier height was higher and the series resistance was lower for O-polar ZnO. The ideality factor versus voltage plot showed a peak for Zn-polar ZnO, which was associated with an interface state effect. The interface state density, calculated from I–V characteristics, was higher for Zn-polar ZnO. The results suggested that the hydrogen-related defects in Zn-polar ZnO were attributed to the high density of interface states..
Hydrogen-related defects, Interface states, Series resistance.
HOGYOUNG KIM, Electrical and interfacial properties of Ag/bulk ZnO Schottky diodes, Optoelectronics and Advanced Materials - Rapid Communications, 7, 11-12, November-December 2013, pp.956-960 (2013).
Submitted at: July 2, 2013
Accepted at: Nov. 7, 2013
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
Active accounts were imported to the new platform and assigned a random password by default. In order to access your account you need to access the login page and go through the Lost Password dialog (involves the system sending you an email with instructions) in order to reset your password. This step is necessary as passwords are kept in hashed form and the new platform uses modern hashing algorithms incompatible with the previous ones.