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M. Z. PAKHURUDDIN1,* , K. IBRAHIM1, A. ABDUL AZIZ1
Samples of thin film silicon (Si) on polyethylene terephthalate (PET) plastic with different Al doping levels (Al/Si ratio) were prepared by thermal evaporation process. Electrical characterisation and surface morphology verifications were then carried out on the samples by Hall effect measurement and atomic force microscopy (AFM). It was found that the conductivity of the Al-doped Si increases with increasing Al/Si ratio and the resulting hole concentration ranges from 1018 up to 1021 atoms/cm3. AFM data shows root mean square (RMS) surface roughness of 9-13 nm, independent of Al/Si ratio. The roughness observed shows surface characteristics produced by the thermal evaporation technique. The effects of the observed properties towards the fabrication of base layer (p-type) in thin film Si solar cells on PET were subsequently discussed..
Polyethylene terephthalate, Hall effect, Solar cells.
M. Z. PAKHURUDDIN, K. IBRAHIM, A. ABDUL AZIZ, Electrical characterisations and surface morphologies of thermally evaporated thin film silicon on plastic substrates for solar cells applications, Optoelectronics and Advanced Materials - Rapid Communications, 4, 10, October 2010, pp.1534-1537 (2010).
Submitted at: July 14, 2020
Accepted at: Oct. 14, 2010
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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