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Y. R. TODA1,* , D. N. GUJARATHI1
Thin films having different thickness of AlSb were deposited by thermal evaporation techniques, onto precleaned amorphous glass substrate. The structural properties of films were evaluated by XRD, SEM, EDAX, Transmission Electron Microscopy (TEM) and optical microscopy. The Photo Luminescence (PL) study of the films are also studied and it is observed that the peaks are obtained at 488.04, 517.29 and 574.8nm shows that zero phonon transition of donor - acceptor pair recombination. The electrical transport properties of annealed thin films have been evaluated. Resistivity (9.2-13.35 X10-5ohm - cm), activation energy (0.0122 – 0.0251 eV), carrier concentration (1.0746 X 1018/cm3), mobility (0.6348 X 105) has been estimated. The X-ray diffraction analys.
AlSb, Thin films, Vacuum evaporation.
Y. R. TODA, D. N. GUJARATHI, Electrical properties of aluminium antimonide thin films deposited by vacuum evaporation technique, Optoelectronics and Advanced Materials - Rapid Communications, 5, 9, September 2011, pp.895-899 (2011).
Submitted at: Jan. 31, 2011
Accepted at: Sept. 15, 2011
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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