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Electrical properties of organic semiconductor copper phthalocyanine thin films deposited from solution at high gravity

KH. S. KARIMOV1,2, I. QAZI1, S. A. MOIZ3, I. MURTAZA1,*

Affiliation

  1. GIK Institute of Engineering Science and Technology, Topi, Swabi, N.W.F.P, Pakistan, 23640
  2. Physical Technical Institute of Academy of Sciences, Rudaki Ave.33, Dushanbe, 734025, Tajikistan
  3. National Centre for Nanotechnology, Pakistan Institute of Engg. & Appl. Sc. (PIEAS), Nilore, Islamabad, Pakistan

Abstract

P-type organic semi conducting copper phthalocynanine (CuPc) thin films were grown from its solution in benzene on nickel (Ni) substrates, at room temperature, by using a centrifugal machine operated at 1107g. On CuPc films aluminum films (transparency was equal to 15 %) were deposited, by vacuum evaporation, to form Schottky junction and Al/p-CuPc/Ni samples were fabricated. I-V characteristics were then evaluated at 24 o C and 64 o C. It was found that dark current-voltage characteristics of the Al / p-CuPc / Ni samples are non-linear and show rectification behavior. Rectification ratio RR defined as the ratio of the forward and reverse currents at the same voltages (here V = ± 30 V) was equal to 2.2 and 2.9 at 24 o C and 64o C, respectively. The dark I-V characteristics were simulated by space-charge limited current (SCLC) approach assuming the presence of deep trapping levels at energy above the valence band edge of the p-CuPc.

Keywords

Organic semiconductor, Copper phthalocyanine, Metal-semiconductor Schottky junction, Simulation, Energy-band diagram, Space charge limited currents, Traps.

Citation

KH. S. KARIMOV, I. QAZI, S. A. MOIZ, I. MURTAZA, Electrical properties of organic semiconductor copper phthalocyanine thin films deposited from solution at high gravity, Optoelectronics and Advanced Materials - Rapid Communications, 2, 4, April 2008, pp.219-223 (2008).

Submitted at: March 2, 2008

Accepted at: April 3, 2008