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Electrical study of Cu-CdS and Zn-CdS Schottky junctions

SANDHYA GUPTA1, DINESH PATIDAR1, N. S. SAXENA1,* , KANANBALA SHARMA1, T. P. SHARMA1

Affiliation

  1. Semiconductor & Polymer Scince Laboratory, 5-6 Vigyan Bhawan, Dept. of Physics, University of Rajasthan, Jaipur, India

Abstract

Schottky junctions (Cu-CdS and Zn-CdS) have been formed by vacuum evaporation of Cu and Zn on to cadmium sulfide (CdS) thin films. I-V Characteristics of these junctions have been recorded at room temperature using Keithley Electrometer. I-V Curves of these junctions show rectifying behaviour with low forward voltage drop. The other junction parameters such as barrier height, ideality factor, series resistance and saturation current have also been calculated, which are in good agreement with the results obtained by other workers. The Cu-CdS and Zn-CdS junctions have also been fabricated by screen-printing technique and electrical study has been done on these junctions to obtain the junction parameters.

Keywords

Cadmium sulfide, I-V characteristics, Schottky junction, Series resistance.

Citation

SANDHYA GUPTA, DINESH PATIDAR, N. S. SAXENA, KANANBALA SHARMA, T. P. SHARMA, Electrical study of Cu-CdS and Zn-CdS Schottky junctions, Optoelectronics and Advanced Materials - Rapid Communications, 2, 4, April 2008, pp.205-208 (2008).

Submitted at: March 17, 2008

Accepted at: April 3, 2008