Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.
V. JANARDHANAM1,* , A. ASHOK KUMAR1, V. RAJAGOPAL REDDY1, P. NARASIMHA REDDY1
The current-voltage (I-V) characteristics of Ru/n-InP Schottky diodes were measured in the temperature range 200 – 400 K. The I-V curves fitted by the equation based on thermionic emission theory has revealed decrease of zero-bias barrier height and increase of ideality factor with decreasing temperature. This behavior has been interpreted by the assumption of Gaussian distribution of barrier heights due to barrier inhomogeneities that prevail at the metal-semiconductor interface. AΦb0 versus q/2kT plot was drawn to obtain evidence of Gaussian distribution of barrier heights yielded values of b0 − Φ = 0.79 eV for mean barrier height and σ 0 =0.122 eV for standard deviation at zero-bias. The modified Richardson plot gives b0 − Φ (T=0)=0.81 eV and A**=5.73 A K-2 cm-2. It can be concluded that the temperature dependence of I-V characteristics of the Schottky barrier on n-InP can be successfully explained on the basis of TE mechanism with Gaussian distribution of the barrier heights.
Schottky diodes, Indium phosphide, I-V characteristics, Barrier height, Ideality Factor, Series resistance.
V. JANARDHANAM, A. ASHOK KUMAR, V. RAJAGOPAL REDDY, P. NARASIMHA REDDY, Electrical transport characteristics of ruthenium/n-InP Schottky diodes from current-voltage-temperature (I-V-T) measurements, Optoelectronics and Advanced Materials - Rapid Communications, 2, 11, November 2008, pp.735-742 (2008).
Submitted at: Sept. 1, 2008
Accepted at: Oct. 30, 2008
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
Active accounts were imported to the new platform and assigned a random password by default. In order to access your account you need to access the login page and go through the Lost Password dialog (involves the system sending you an email with instructions) in order to reset your password. This step is necessary as passwords are kept in hashed form and the new platform uses modern hashing algorithms incompatible with the previous ones.