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Electro-optical properties of As-Se-S—dielectric structure for optical information recording in real time

A. CHIRITA1, V. PRILEPOV1, M. POPESCU2,* , O. CORSAC1, P. CHETRUS1, N. NASEDCHINA1

Affiliation

  1. Moldova State University, 60 A. Mateevici Str., Chisinau, MD-2009, Republic of Moldova
  2. National Institute of Materials Physics, 105 bis Atomistilor Str., P.O. Box MG 7, RO-77125 Măgurele, Romania

Abstract

The results of electro-optical properties studies of chalcogenide glassy semiconductors thin film structures based on Xat.%As2S3:(100-X)at.%As2Se3 system for holographic information recording on to photo-thermoplastic carriers in stationary and pulsed modes..

Keywords

Chalcogenide glassy semiconductors, Photothermoplasic media.

Citation

A. CHIRITA, V. PRILEPOV, M. POPESCU, O. CORSAC, P. CHETRUS, N. NASEDCHINA, Electro-optical properties of As-Se-S—dielectric structure for optical information recording in real time, Optoelectronics and Advanced Materials - Rapid Communications, 9, 7-8, July-August 2015, pp.919-923 (2015).

Submitted at: April 6, 2015

Accepted at: June 24, 2015