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Electrodeposition and characterization of CuInSe2/CdS multilayered thin films deposited on flexible substrate

V. SOARE1, M. BURADA1, D. MITRICA1,* , V. BADILITA1, F. STOICIU1, C. P. LUNGU2, V. GHENESCU3, M. I. RUSU4,5, Ş. ANTOHE4

Affiliation

  1. National Research&Development Institute for nonferrous and Rare Metals – IMNR 102 Biruinţei B-lvd, Postal code: 077145, Pantelimon, Ilfov, Romania
  2. National Institute for Laser, Plasma and Radiation Physics, Măgurele, Ilfov, Romania
  3. Space Science Institute, Măgurele, Ilfov, Romania
  4. University of Bucharest- Physics Faculty, Magurele, Ilfov, Romania
  5. National Institute of Research and Development for Optoelectronics, 409 Atomistilor Street, RO-077125 Măgurele, Ilfov, Romania

Abstract

Highly efficient multilayered thin films of Kapton/Ni/CIS/CdS/Al were obtained. Kapton is a plastic material with good flexibility, mechanical and high temperature resistance. A 1.5 micron layer of nickel was deposited on kapton material by TVA method. Single step co-deposition method was used to prepare the CIS layer. A subsequent 350 ºC annealing was applied to improve CIS crystallinity and homogeneity. A CdS layer was deposited by single source thermal vacuum evaporation method. XRD and SEM-EDAX analyses confirmed a uniform and near to CIS stoichiometry composition. Ellipsometry revealed band gaps of 1.03 eV for CIS and 2.46eV for CdS, which confirm the literature data.

Keywords

CIS, Thin films, Electrodeposition, Optoelectronic.

Citation

V. SOARE, M. BURADA, D. MITRICA, V. BADILITA, F. STOICIU, C. P. LUNGU, V. GHENESCU, M. I. RUSU, Ş. ANTOHE, Electrodeposition and characterization of CuInSe2/CdS multilayered thin films deposited on flexible substrate, Optoelectronics and Advanced Materials - Rapid Communications, 4, 12, December 2010, pp.2018-2021 (2010).

Submitted at: Nov. 1, 2010

Accepted at: Nov. 29, 2010