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M. S. IOVU1,* , S. A. SERGEEV1, O. V. IASENIUC1
Thin films of (As4S3Se3)1-xSnx (х=0; 0.01; 0.03; 0.05) chalcogenide glasses have been used for the direct e-beam recording of the diffraction grating structures. The influences of the amorphous film composition on properties of the diffraction gratings were shown. The dependence of the diffraction efficiency of gratings with the period of Δ=1 μm and Δ=2 μm versus the radiation dose was investigated. An enhancement of the diffraction efficiency caused by the uniform laser irradiation was observed for gratings recorded in the As4S3Se3:Sn thin films..
Chalcogenide glasses, Amorphous thin films, Electron-beam recording, Diffractive gratings.
M. S. IOVU, S. A. SERGEEV, O. V. IASENIUC, Electron-beam recording of the diffraction gratings in the (As4S3Se3)1-xSnx amorphous thin films, Optoelectronics and Advanced Materials - Rapid Communications, 12, 7-8, July-August 2018, pp.377-380 (2018).
Submitted at: Nov. 28, 2018
Accepted at: Aug. 9, 2018
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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