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ZHIMIN LI1,* , ZI YANG1, CHUANGCHUANG HE1, MAOLIN ZHANG1, YUNXIA HUANG1, YUE HAO1
The formation energy, electronic structure and complex permittivities of 3C-SiC with different Al and N codoping levels were studied by the first principles plane wave pseudo-potential method based on the density functional theory. Results showed that the incorporation of N into SiC lowered the formation energy of Al-doped SiC, and that the band gap of co-doped SiC increased with increasing Al level. Both real part ε′ and imaginary part ε″ of complex permittivities for co-doped SiC in the frequency range of 8.2-18GHz increased firstly, and then decreased as the level of Al increased, with the maximum values in ε′ and ε″ for Al3-N complex..
3C-SiC, Codoping, Electronic structure, Dielectric property.
ZHIMIN LI, ZI YANG, CHUANGCHUANG HE, MAOLIN ZHANG, YUNXIA HUANG, YUE HAO, Electronic structure and microwave dielectric properties of Al and N co-doped 3C-SiC, Optoelectronics and Advanced Materials - Rapid Communications, 9, 11-12, November-December 2015, pp.1503-1507 (2015).
Submitted at: June 11, 2014
Accepted at: Oct. 28, 2015
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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