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MUMTA HENA MUSTARY1, VOLODYMYR V. LYSAK1,*
A quantitative investigation of light extraction efficiency for hemispherical and pyramidal pattern surface textured GaN based vertical light emitting diode (VLED) was reported by various distance and size ratios. There is a significant increase in light extraction efficiency because of increase number of random scattering of textured surface. Hemisphere pattern surface always gives the 30% better enhancement than pyramid type pattern. We also showed the efficiency dependency on the reflectivity of GaN/metal interface. Furthermore, a linear diffraction grating with certain grating period can eliminate the distance and size ratio dependency on output power which can be considered as an integrated surface texture..
Vertical light emitting diode (VLED), Light extraction efficiency (LEE), Multiple Quantum Well (MQW), Total internal reflection (TIR), Diffraction grating.
MUMTA HENA MUSTARY, VOLODYMYR V. LYSAK, Enhanced light extraction efficiency of vertical light emitting diode by hemispherical and pyramidal pattern surface texture, Optoelectronics and Advanced Materials - Rapid Communications, 7, 7-8, July-August 2013, pp.494-497 (2013).
Submitted at: Feb. 8, 2013
Accepted at: July 11, 2013
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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