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DIFEI SUN1, ZHENHONG JIA2,* , XIAOYI LV2
We report a new way to enhance the photoluminescence of porous silicon(PS) in red light(625 nm) under room temperature by doping the rare earth(Yb) in porous silicon with distributed Bragg reflection (DBR) structures. It is observed that a suitable concentration of Yb3+ ions could enhance the photoluminescence of porous silicon effectively. Compared with the single-layer porous silicon film, the enhancement of Yb-doped PS photoluminescence from porous silicon DBR structures is higher. RE doping and DBR structures could double strengthen PS photoluminescence..
DBR structures, Photoluminescence, Porous silicon, Rare earth.
DIFEI SUN, ZHENHONG JIA, XIAOYI LV, Enhanced photoluminescence from porous silicon by rare earth doping and DBR structures, Optoelectronics and Advanced Materials - Rapid Communications, 10, 9-10, September-October 2016, pp.689-692 (2016).
Submitted at: June 3, 2015
Accepted at: Sept. 29, 2016
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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