Abstract
The utilization of electromigration for enhancement of Al thin wire fabrication was investigated. The experimental sample was a passivated Al line with a square hole at the anode end, and wire fabrication was affected by both the thickness of the passivation layer and the side length of the hole. The optimum value of the passivation layer thickness was determined. Both the time to failure of the Al line and the length of formed wire increased with increasing thickness up to the optimum thickness. Wire fabrication was also enhanced by increasing the side length of the discharge hole..
Keywords
Electromigration, Aluminum, Adhesion, Thin films.
Citation
YEBO LU, HIRONORI TOHMYOH, MASUMI SAKA, HONGLIANG PAN, Enhancement of Al thin wire fabrication by using electromigration in relation to the discharge resistance of the atoms, Optoelectronics and Advanced Materials - Rapid Communications, 5, 11, November 2011, pp.1219-1222 (2011).
Submitted at: Aug. 23, 2011
Accepted at: Nov. 23, 2011