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Enhancement of Al thin wire fabrication by using electromigration in relation to the discharge resistance of the atoms

YEBO LU1,2,* , HIRONORI TOHMYOH2, MASUMI SAKA2, HONGLIANG PAN1

Affiliation

  1. School of Mechanical and Power Engineering, East China University of Science and Technology, 130 Meilong Road, Shanghai 200237, PR China
  2. Department of Nanomechanics, Tohoku University, Aoba 6-6-01, Aramaki, Aoba-ku, Sendai 980-8579, Japan

Abstract

The utilization of electromigration for enhancement of Al thin wire fabrication was investigated. The experimental sample was a passivated Al line with a square hole at the anode end, and wire fabrication was affected by both the thickness of the passivation layer and the side length of the hole. The optimum value of the passivation layer thickness was determined. Both the time to failure of the Al line and the length of formed wire increased with increasing thickness up to the optimum thickness. Wire fabrication was also enhanced by increasing the side length of the discharge hole..

Keywords

Electromigration, Aluminum, Adhesion, Thin films.

Citation

YEBO LU, HIRONORI TOHMYOH, MASUMI SAKA, HONGLIANG PAN, Enhancement of Al thin wire fabrication by using electromigration in relation to the discharge resistance of the atoms, Optoelectronics and Advanced Materials - Rapid Communications, 5, 11, November 2011, pp.1219-1222 (2011).

Submitted at: Aug. 23, 2011

Accepted at: Nov. 23, 2011