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Y. MINGHUI1,* , S. QIXIANG1, L. SHIJUN1, L. JINGSHENG1
In this paper, we had investigated site control led and low density quantum dots (QDs) required communications band single photon source on the pattern ed substrate s by molecular beam epitaxy (There were st ill difficulties in isolating single QD s from the low density QD s assemble. In order to overcome such difficulty, growth of site control led QDs on pre patterned substrate s w ere proposed and preserve high material quality of the low density QDs for a real single photon, the In(Ga)As/GaAs QDs grown on the high reflectivity distributed bragg reflector mirror composed of a limited thickness of the wavelength of the micro cavity center. T he spectrum measured at 10K, and the wavelength was 1.3156μm, width only was 45μeV, respectively. The results show ed that the site controlle d and low density QDs growth technology would be prepared not only had high optical quality, but also for communications band 1.3μm single photon emission..
Site-controlled, Low-density, Quantum dots, Single-photon, MBE.
Y. MINGHUI, S. QIXIANG, L. SHIJUN, L. JINGSHENG, Epitaxial g rowth and o ptical p roperties of ultra low density InAs quantum dots on patterned substrate by MBE, Optoelectronics and Advanced Materials - Rapid Communications, 9, 1-2, January-February 2015, pp.36-39 (2015).
Submitted at: Nov. 13, 2014
Accepted at: Jan. 21, 2015
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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