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Y. L. HAN1, H. B. PU1, Y. ZANG1, L. B. LI1,2,*
Ge thin films were prepared on 6H SiC(0001) substrates by low pressure chemical vapor deposition. X ray diffraction, Scanning electron Microscope and Raman spectroscopy were applied to characterize the Ge/6H SiC heterostructures. XRD spectra shows that only o ne peak is located at 2θ= 26.68°, which indicated that Ge films grow preferentially along <111> crystalline orientation on 6H SiC(0001) Si face at 850 ℃℃. T he epitaxial growth of the Ge film follows the Stranski Krastanow mode, Ge spherical islands form on th e two dimensional layer with a critical thickness of 7.5nm..
SiC/Ge heterostructure, LPCVD, Oswald coalescence, Stranski Krastanow mode.
Y. L. HAN, H. B. PU, Y. ZANG, L. B. LI, Epitaxial growth of Ge film on 6H-SiC(0001) by LPCVD, Optoelectronics and Advanced Materials - Rapid Communications, 10, 9-10, September-October 2016, pp.737-739 (2016).
Submitted at: March 3, 2016
Accepted at: Sept. 29, 2016
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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