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Experimental study of porous silicon films prepared on N and P type monocrystalline silicon wafers

SALAH RAHMOUNI1,2,* , LILIA ZIGHED3, ISSAM TIFOUTI4, SELMA HADNINE3, MOHAMED SALAH AIDA5

Affiliation

  1. Department of Electrical Engineering, University of 20 août 1955 Skikda, Algeria
  2. Normal High School of Technological Education (ENSET), Skikda, Algeria
  3. Laboratory of Chemical Engineering and Environment, University of 20 août 1955, Skikda, Algeria
  4. Department of Electrotechnic and Automatic, University of 8 may 1945 Guelma, Algeria
  5. Laboratory of the Thin Layers and Interfaces, University of Constantine Algeria

Abstract

In the present study, porous silicon films were prepared on N and P types silicon wafers (100) crystallographic orientations. We have investigated the influence of the different anodization parameters and silicon wafers on the properties of the obtained porous silicon layer such as: morphology, thickness and porosity. The reflectance measurements of the prepared samples, have presented reduction of reflection due to the porous layers and suggests the anti-reflecting character of the realized porous layer..

Keywords

Porous silicon, Antireflective coating, Electrochemical anodization, Solar cell.

Citation

SALAH RAHMOUNI, LILIA ZIGHED, ISSAM TIFOUTI, SELMA HADNINE, MOHAMED SALAH AIDA, Experimental study of porous silicon films prepared on N and P type monocrystalline silicon wafers, Optoelectronics and Advanced Materials - Rapid Communications, 11, 1-2, January-February 2017, pp.105-108 (2017).

Submitted at: July 16, 2015

Accepted at: Feb. 10, 2017