Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.
K. R. RAM VICTORIA1,* , S. VASUKI1
This article reports the fabrication and electrical properties of RF sputtered Zinc oxide (ZnO) thin film based staggered bottom gate phototransistors. XRD, AFM, SEM and optical measurements are carried out for the studying the surface morphological, optical as well as structural quality of the deposited thin films. The RF sputtered ZnO thin films are normal to the substrate oriented along the c-axis and exhibit high absorption in the ultraviolet (UV) region. The Thin-Film Transistor (TFT) presented in this work employs sputtered ZnO film as the active channel layer. The proposed enhancement mode device exhibits threshold voltage, channel mobility, and on-off ratio of 4.8V, 5.2 cm2/V.s, and 106 respectively. The potential of the device in UV detection application was tested subsequently using an optical power source of 2.3 W/cm 2. The device output current (drain to source current: IDS) increased dramatically with UV illumination and the illumination-to-dark current ratio evaluated to be greater than 4 proving the possibility of the device to stand as a potential candidate in UV photodetection applications.
ZnO thin films, RF Sputtering, Thin-film Transistors, Phototransistor, Electrical Properties, UV sensor.
K. R. RAM VICTORIA, S. VASUKI, Fabrication and characterization of RF sputtered ZnO thin film based phototransistors for UV detection applications, Optoelectronics and Advanced Materials - Rapid Communications, 15, 7-8, July-August 2021, pp.341-347 (2021).
Submitted at: Feb. 22, 2021
Accepted at: Aug. 16, 2021
Optoelectronics and Advanced Materials - Rapid Communications
(2022): 0.5 - 2022 Journal Citation Reports (Clarivate Analytics, 2023)
Active accounts were imported to the new platform and assigned a random password by default. In order to access your account you need to access the login page and go through the Lost Password dialog (involves the system sending you an email with instructions) in order to reset your password. This step is necessary as passwords are kept in hashed form and the new platform uses modern hashing algorithms incompatible with the previous ones.