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Far infrared and photoacoustic characterization of iodine doped PbTe

P. M. NIKOLIĆ1,* , K. M. PARASKEVOPOULOS2, O. S. ALEKSIĆ3, S. S. VUJATOVIĆ1, D. VASILJEVIĆ-RADOVIĆ4, T. T. ZORBA2, V. BLAGOJEVIĆ5, N. NIKOLIC3, M. RADOVANOVIĆ6, M. V. NIKOLIĆ3

Affiliation

  1. Institute of Technical Science of SASA, Knez Mihailova 35, Belgrade, Serbia
  2. Physics Department, Solid State Section, Aristotle University, Thessaloniki, Greece
  3. Institute for Multidiciplinary Research, University of Belgrade, Kneza Višeslava 1, Belgrade, Serbia
  4. ICTM-Centre of Microelectronic Technologies and Single Crystals, University of Belgrade, Njegoševa 12, Belgrade, Serbia
  5. Faculty of Electrical Engineering, University of Belgrade, Belgrade, Serbia
  6. Faculty of Technical Sciences,University of Novi Sad, Novi Sad, Serbia

Abstract

Single crystal samples of PbTe doped with PbI2 were made using the Bridgman technique. Far infrared reflectivity diagrams of PbTe doped with 0.4 at% and 0.6 at% Iodine were measured and numerically analyzed. A plasma resonance at about 650 cm-1 with the reflectivity minima very close to zero was observed for both samples. Thermal diffusivity was determined for the same samples using the photoacoustic method with a transmission detection configuration and the values of the minority free carrier (holes) mobility were calculated..

Keywords

Doped Semiconductors, Far Infrared Reflectivity, Photoacoustic Characterization.

Citation

P. M. NIKOLIĆ, K. M. PARASKEVOPOULOS, O. S. ALEKSIĆ, S. S. VUJATOVIĆ, D. VASILJEVIĆ-RADOVIĆ, T. T. ZORBA, V. BLAGOJEVIĆ, N. NIKOLIC, M. RADOVANOVIĆ, M. V. NIKOLIĆ, Far infrared and photoacoustic characterization of iodine doped PbTe, Optoelectronics and Advanced Materials - Rapid Communications, 6, 3-4, March-April 2012, pp.352-356 (2012).

Submitted at: Dec. 29, 2011

Accepted at: April 11, 2012