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Far infrared reflectivity spectra of lead-telluride doped with Mn and Yb

P. M. NIKOLIC1,* , K. M. PARASKEVOPOULOS2, T. T. ZORBA2, Z. Z. DJURIC1, E. PAVLIDOU2, S. S. VUJATOVIC1, V. BLAGOJEVIC3, O. S. ALEKSIC4, M. V. NIKOLIC4

Affiliation

  1. Institute of Technical Sciences of SASA, Knez Mihailova 35/IV, 11000 Belgrade, Serbia
  2. Physics Department, Solid State Section, Aristotle University of Thessaloniki, 54124 Thessaloniki, Greece
  3. Faculty of Electrical Engineering, University of Belgrade, Bulevar Kralja Aleksandra 73, 11000 Belgrade, Serbia
  4. Institute for Multidisciplinary Research, University of Belgrade, Kneza Viseslava 1, 11000 Beograd, Serbia

Abstract

PbTe single crystal samples doped with Mn and Yb were grown using the Bridgman method. Far infrared reflectivity spectra were measured at room temperature for samples with different impurity concentrations (total impurity concentration Mn+Yb varied between 0.59 and 2.52 at%, while the impurity Mn/Yb ratio varied between 0 and 3.48). All samples were of the “p” type. Plasma minimum was registered for all samples and varied between 114 and 198 cm-1 depending on the total impurity concentration and ratio. Samples with lower plasma minimum had a higher free hole mobility, with the highest value of 7000 cm2/Vs determined for a sample with the highest Mn/Yb ratio of 3.48 (1.67 at.% Mn and 0.48 at.% Yb)..

Keywords

Semiconductors, Lead telluride, Far infrared reflectivity, Dopants.

Citation

P. M. NIKOLIC, K. M. PARASKEVOPOULOS, T. T. ZORBA, Z. Z. DJURIC, E. PAVLIDOU, S. S. VUJATOVIC, V. BLAGOJEVIC, O. S. ALEKSIC, M. V. NIKOLIC, Far infrared reflectivity spectra of lead-telluride doped with Mn and Yb, Optoelectronics and Advanced Materials - Rapid Communications, 7, 5-6, May-June 2013, pp.362-366 (2013).

Submitted at: Aug. 21, 2012

Accepted at: June 12, 2013