Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.
N. A. ISMAYILOVA1,* , S. H. JABAROV1,2
The electronic band structure, density of states (DOS) of TlGaSe2 are calculated by the using Quantum Wise Atomistix Tool Kit program on the basis of density functional theory. The calculated band structure shows direct and indirect band gap of 0.87 and 0.99 eV. Top of valence band located at the Г point, bottom of conduction band located along the Г-Y line. From the DOS analysis, have been established that top of valence band mainly originated from 6p state electrons of Se atoms. Bottom of conduction band originated from 4s state of Ga atoms..
DOS, Electronic structure, TlGaSe2.
N. A. ISMAYILOVA, S. H. JABAROV, First-principles study of the electronic structure and DOS spectrum of TlGaSe2, Optoelectronics and Advanced Materials - Rapid Communications, 11, 5-6, May-June 2017, pp.353-356 (2017).
Submitted at: April 27, 2016
Accepted at: June 7, 2017
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
Active accounts were imported to the new platform and assigned a random password by default. In order to access your account you need to access the login page and go through the Lost Password dialog (involves the system sending you an email with instructions) in order to reset your password. This step is necessary as passwords are kept in hashed form and the new platform uses modern hashing algorithms incompatible with the previous ones.