Gaussian beam response of infrared photodetector with quantum dot nanostructure
HONGMEI LIU1,2,*
,
LIJUAN DONG1,2,
TIANHUA MENG1,2,
YUNLONG SHI1,2
Affiliation
- Institute of Solid State Physics, Shanxi Datong University, Datong City, ShanXi Province, 037009, China
- Higher Education Key Laboratory of New Microstructure function materials (Shanxi Datong University) in Shanxi Province, Datong, 037009, China
Abstract
The photo-response of the quantum dot infrared photodetector attracts more and more attentions. In this paper, the
photo-response of the quantum dot infrared photodetector is studied by considering the influence of the photoconductive
gain, the quantum efficiency and incidence light distribution. The corresponding calculated results show the dependence of
the photocurrent of the QDIP on the related parameters of the incident light, and but also give the contributions of the electric
field to the photocurrent..
Keywords
QDIP, Gausssion light beam, Photocurrent.
Citation
HONGMEI LIU, LIJUAN DONG, TIANHUA MENG, YUNLONG SHI, Gaussian beam response of infrared photodetector with quantum dot nanostructure, Optoelectronics and Advanced Materials - Rapid Communications, 11, 3-4, March-April 2017, pp.144-147 (2017).
Submitted at: July 20, 2016
Accepted at: April 6, 2017