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Gaussian beam response of infrared photodetector with quantum dot nanostructure

HONGMEI LIU1,2,* , LIJUAN DONG1,2, TIANHUA MENG1,2, YUNLONG SHI1,2

Affiliation

  1. Institute of Solid State Physics, Shanxi Datong University, Datong City, ShanXi Province, 037009, China
  2. Higher Education Key Laboratory of New Microstructure function materials (Shanxi Datong University) in Shanxi Province, Datong, 037009, China

Abstract

The photo-response of the quantum dot infrared photodetector attracts more and more attentions. In this paper, the photo-response of the quantum dot infrared photodetector is studied by considering the influence of the photoconductive gain, the quantum efficiency and incidence light distribution. The corresponding calculated results show the dependence of the photocurrent of the QDIP on the related parameters of the incident light, and but also give the contributions of the electric field to the photocurrent..

Keywords

QDIP, Gausssion light beam, Photocurrent.

Citation

HONGMEI LIU, LIJUAN DONG, TIANHUA MENG, YUNLONG SHI, Gaussian beam response of infrared photodetector with quantum dot nanostructure, Optoelectronics and Advanced Materials - Rapid Communications, 11, 3-4, March-April 2017, pp.144-147 (2017).

Submitted at: July 20, 2016

Accepted at: April 6, 2017