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H. ALTUNTAS1,* , S. OZCELIK1
Two AlGaAs/GaAs quantum well infrared photodetectors (QWIPs) were grown using molecular beam epitaxy (MBE) with continues growth method. One of them has bound-to-bound transition (B-T-B) QWIP and the other has bound-to-continuum transition (B-T-C) QWIP. The structural properties of the QWIPs were characterized by high-resolution x-ray diffraction (HRXRD) and optical properties were characterized by photoluminescence (PL) measurements. Also dark current measurements of the QWIPs were performed at low temperature and show that the B-T-C QWIP has lower dark current level than B-T-B QWIP due to reducing the carrier tunneling..
AlGaAs/GaAs QWIP, High resolution x-ray diffraction, Photoluminescence, Dark current.
H. ALTUNTAS, S. OZCELIK, Growth and characterization of AlGaAs/GaAs quantum well infrared photodetectors, Optoelectronics and Advanced Materials - Rapid Communications, 4, 2, February 2010, pp.132-135 (2010).
Submitted at: May 4, 2009
Accepted at: Feb. 2, 2010
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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