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A. K. DASADIA1,2,* , B. B. NARIYA1, A. R. JANI1
We reports new ternary ZrSTe crystals gown by chemical vapour transport method. Vapor transport experiments with iodine were performed on the system ZrSTe to define optimum growth conditions in terms of crystal size and surface perfection. Confirmation of stoichiometric proportion of constituent elements of grown crystals was done by Energy Dispersive Analysis of X-rays (EDAX). To find out resistivity we have performed two probe resistivity measurements and Hall coefficient, mobility as well as carrier concentration are obtained by Hall effect measurements along the cleavage plane of as grown ZrSTe crystals. Preliminary electrical resistivity measurements show a decrease of the resistance with temperature which suggests a semiconducting nature of ZrSTe. We also report thermoelectric power of ZrSTe crystals in temperature range 313K-573K. Data of Hall coefficient and thermoelectric power have good agreement with available data and confirms the semiconducting behavior as well as n-type nature of ZrSTe crystals. This finding will inspire the search for similar materials and promote an in-depth investigation of the detailed operating mechanism..
CVT, Hall effect, Thermoelectric power.
A. K. DASADIA, B. B. NARIYA, A. R. JANI, Growth and electrical properties of ternary ZrSTe crystals, Optoelectronics and Advanced Materials - Rapid Communications, 7, 1-2, January-February 2013, pp.70-73 (2013).
Submitted at: July 7, 2012
Accepted at: Feb. 20, 2013
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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