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B. B. NARIYA1,* , A. K. DASADIA1, A. R. JANI1
Tin monosulphide and Tin monoselenide single crystals have been grown by a direct vapour transport technique. Confirmation of stoichiometric proportion of constituent elements and determination of crystal structure of grown crystals were done by EDAX and powder X-ray diffraction analysis respectively. The surface microtopographic study of as grown crystals showed that they are grown by lateral layer mechanism. Pressure dependent electrical resistance was studied using Bridgeman opposed anvils experimental system up to 6 GPa for SnS and SnSe single crystals..
High pressure, Bridgeman opposed anvil, Surface microtopography, Tin monosulfide and Tin monoselenide.
B. B. NARIYA, A. K. DASADIA, A. R. JANI, Growth, microtopography and effect of pressure on electrical resistance of DVT grown SnS and SnSe single crystals, Optoelectronics and Advanced Materials - Rapid Communications, 7, 1-2, January-February 2013, pp.53-57 (2013).
Submitted at: July 7, 2012
Accepted at: Feb. 20, 2013
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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