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JIANFENG SU1,* , CHUNHE ZANG1, QIANG NIU1, RUIRUI SUN1, JIAO ZHANG1, YONGSHENG ZHANG1
Al doped ZnO films were grown on PI flexible substrate by Sol-Gel method. To improve the optical and electrical properties, homogeneous buffer layers were introduced before the grown of ZnO films using magnetron sputtering techno logy. A systematical and detailed study of the effect of buffer layer sputtering time on structural, optical and electrical properties were discussed using XRD, SEM and PL. For samples with homogeneous buffer layer, excellent crystallization quality and op tical properties were obtained. Moreover, as increasing the sputtering time of buffer layer, the properties of ZnO films were improved further. All Al doped samples demonstrate more than 85% of the optical transparency in the visible region. Low electrical resistivity of Al doped ZnO films was obtained. However, as the increased of buffer layer sputtering time, due to defects and grain boundary scattering which caused by thicker buffer layer, the hall mobility is increased initially and then decreased..
ZnO, Flexible substrate, Al doped, Buffer layer.
JIANFENG SU, CHUNHE ZANG, QIANG NIU, RUIRUI SUN, JIAO ZHANG, YONGSHENG ZHANG, H omogeneous b uffer layer techn ique for the growth of Al doped ZnO fi lms on flexible substrate, Optoelectronics and Advanced Materials - Rapid Communications, 11, 5-6, May-June 2017, pp.337-341 (2017).
Submitted at: Aug. 4, 2016
Accepted at: June 7, 2017
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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