"

Cookies ussage consent

I agree.

Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.

High efficient 635 nm resonant-cavity light-emitting diodes with modified electron stopped layers

V. V. LYSAK1,* , C. Y. PARK2, K. W. PARK2, Y. T. LEE2,3,*

Affiliation

  1. Semiconductor Physics Department, Chonbuk National Uviversity, Chonbuk, Republik of Korea
  2. Gwangju Institute of Science and Technology (GIST), Gwangju, Republic of Korea
  3. Department of Nanobio Materials and Electronics, GIST, Gwangju, Republic of Korea

Abstract

The analysis of electro-optical properties of 635 nm InGaP/InGaAlP resonant-cavity light-emitting diodes with AlGaAs mirrors is presented. We show that including the p-doped electron stop layer in both side of active layer improves the efficiency of such device due to increasing the electron capture efficiency in the quantum wells and decreasing the electrical field across the active layer. Theoretical analysis is proved by experimental work.

Keywords

Charge carrier processes, Modeling, Semiconductor materials, Quantum wells, Resonant cavity light emitting diodes.

Citation

V. V. LYSAK, C. Y. PARK, K. W. PARK, Y. T. LEE, High efficient 635 nm resonant-cavity light-emitting diodes with modified electron stopped layers, Optoelectronics and Advanced Materials - Rapid Communications, 4, 6, June 2010, pp.778-783 (2010).

Submitted at: Feb. 10, 2010

Accepted at: June 16, 2010