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HAI-ING XIE1,* , LI-UN TANG1, JUN-LONG TANG1, YONG-JUN WEN1
Due to depleted region but not inversion region formed by the gate voltage (VGK) in thin film and ITO film with transmittancea above 80% at λ ≥ 400nm adopted as transparent electrode , high quantum efficiency (QE) could be achieved in SOI film lateral PIN photodiode gated by transparent electrode (LPIN PD-GTE). Physical models for and analysis for quantum efficiency in LPIN PD-GTE were both presented and validated by ATLAS. Quantum efficiency versus the intrinsic length was also discussed. Results indicated that the QE decreased along with the increasing channel length at VGK=0V. However, the contribution of V GK to QE wa s larger for longer chann el in LPIN PD GTE. T he increasing amplitude were respectively, almost 8% and more than 50% for L i =10 10μm and Li =50 50μm from VGK =0V to VGK =1.0V. The increment of quantum efficiency in LPIN PD-GTE with VGK=0.6V is almost 50% to that in lateral PIN photodiode (LPIN PD) with Li=50μm and the same other parameters..
Quantum-efficiency, LPIN PD-GTE, Physical models, Silicon on insulator.
HAI-ING XIE, LI-UN TANG, JUN-LONG TANG, YONG-JUN WEN, High quantum efficiency in lateral PIN photodiode gated by transparent electrode fabricated on SOI film, Optoelectronics and Advanced Materials - Rapid Communications, 8, 1-2, January-February 2014, pp.77-82 (2014).
Submitted at: July 26, 2013
Accepted at: Jan. 22, 2014
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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