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High rate and low loss Ta2O5 thin films deposited by novel remote plasma reactive sputtering

Y. K. BU1, Z. LIU1, L. J. CHEN1, Z. P. CAI1, N. CHEN1,*

Affiliation

  1. Department of Electronic Engineering, Xiamen University, Xiamen, Fujian 361005, China

Abstract

In this work we report a novel remote plasma deposition technology for high-rate DC reactive sputtering deposition of low loss Ta2O5 films. Deposition rate and optical properties were mainly investigated with process conditions change. This technique is based on generating an intensive plasma remotely from the target and magnetically steering plasma to the target to realize sputtering deposition. It overcomes inherent limitations such as racetrack formation on target and low rate deposition in conventional sputtering technology and realizes fully uniform erosion over the target. Dense Ta2O5 thin films with a high deposition rate 0.53nm/s, excellent optical properties are obtained.

Keywords

Plasma source, Sputtering deposition, Ta2O5 thin films.

Citation

Y. K. BU, Z. LIU, L. J. CHEN, Z. P. CAI, N. CHEN, High rate and low loss Ta2O5 thin films deposited by novel remote plasma reactive sputtering, Optoelectronics and Advanced Materials - Rapid Communications, 4, 8, August 2010, pp.1154-1157 (2010).

Submitted at: July 1, 2010

Accepted at: Aug. 12, 2010