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R. K. GUPTA1,* , K. GHOSH1, R. PATEL2, P. K. KAHOL1
Highly conducting and transparent multilayer films based on zinc oxide/molybdenum- doped indium oxide/zinc oxide (ZnO/IMO/ZnO) were deposited on quartz substrate by pulsed laser deposition technique. The effect of ZnO and IMO thickness on structural, optical, and electrical properties is studied. It is observed that these films are highly oriented along (002) and (222) direction for ZnO and IMO films respectively. The transparency of multilayer films is over 86%. The bandgap of these films depends on thickness of different layers and is in range of 3.20 eV-3.63 eV. The low resistivity (5.70×10-5 Ω.cm), high carrier concentration (4.53×1020 cm-3), high mobility (242 cm2 V-1s-1), and wide bandgap make these multilayers suitable of optoelectronic applications.
Zinc oxide, Pulsed laser, Semiconductor, Optical property, Multilayer.
R. K. GUPTA, K. GHOSH, R. PATEL, P. K. KAHOL, Highly conducting and transparent multilayer films based on ZnO and Mo-doped indium oxide for optoelectronic applications, Optoelectronics and Advanced Materials - Rapid Communications, 2, 12, December 2008, pp.792-795 (2008).
Submitted at: Nov. 10, 2008
Accepted at: Dec. 4, 2008
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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