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Highly reproducible high-index-contrast distributed Bragg reflectors with an oxidized digital-alloy AlGaAs

GUNWU JU1,2, SUBIN LEE3, BYUNG HOON NA4, HYUNG-JUN KIM2,5, YOUNG MIN SONG1,*

Affiliation

  1. School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea
  2. Center for Spintronics, Korea Institute of Science and Technology (KIST), Seoul 02792, South Korea
  3. Integrated Optics Laboratory, Advanced Photonics research Institute, Gwangju 61005, Republic of Korea
  4. maging Device Lab, Samsung Advanced Institute of Technology, Suwon -si, 16678, Republic of Korea
  5. Division of Nano & Information Technology, KIST School, Korea University of Science & Technology, Seoul 02792, South Korea

Abstract

We demonstrate uniform and reproducible high-index-contrast distributed Bragg reflectors (HIC-DBRs) by introducing an oxidized digital-alloy (DA) layer for low index materials. Fine-tunable DA-Al0.98Ga0.02As layers, which consists of multiple stacks of 1 monolayer (ML)-thick GaAs and 49 ML-thick AlAs layers, are used for generating stable Al xOy layers instead of a conventional, bulk AlAs layers. Highly uniform arrays of oxidized alumina are obtained through a wet -oxidation of DAAlGaAs layers, which enable practical use of HIC-DBRs for vertical cavity surface emitting lasers (VCSELs) and other resonant-cavity based optoelectronic devices. Detailed experiments together with optical calculations are also shown..

Keywords

Digital-alloy, High-index-contrast, Distributed Bragg reflector, AlGaAs, Oxidation, VCSEL.

Citation

GUNWU JU, SUBIN LEE, BYUNG HOON NA, HYUNG-JUN KIM, YOUNG MIN SONG, Highly reproducible high-index-contrast distributed Bragg reflectors with an oxidized digital-alloy AlGaAs, Optoelectronics and Advanced Materials - Rapid Communications, 12, 3-4, March-April 2018, pp.137-139 (2018).

Submitted at: Sept. 25, 2017

Accepted at: April 5, 2018