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M. Z. Mohd YUSOFF1,2,* , Z. HASSAN1, H. Abu HASSAN1, Y. YUSOF1, M. J. ABDULLAH1
The aluminum gallium nitride (AlGaN) layers are grown on silicon (Si) (111) substrate by plasma assisted molecular beam epitaxy (PA-MBE) on top of a GaN/AlN buffer in order to reduce the strain of the alloy. Two samples of AlGaN layers were grown on GaN/AlN/Si(111) with different growth conditions. The full width at half-maximum (FWHM) of the two AlxGa1-xN alloys deposited on silicon as determined by X-ray diffraction (XRD) symmetric rocking curve (RC) ω/2θ scans of (0002) plane at room temperature are 0.620 and 0.520, respectively. The aluminum (Al) mole-fractions of these samples as deduced from Vegard’s law and high resolution X-ray diffraction (HR-XRD) measurement are 0.11 and 0.29, respectively. Photoluminescence (PL) spectrums of both samples have shown sharp and intense band edge emission of gallium nitride (GaN) without the existence of yellow emission band, showing good crystal quality of the samples have been successfully grown on Si substrate.
III-Nitrides, AlGaN, Silicon substrate, MBE.
M. Z. Mohd YUSOFF, Z. HASSAN, H. Abu HASSAN, Y. YUSOF, M. J. ABDULLAH, HR-XRD and PL studies of AlxGa1-xN layers grown on Si (111) substrate by plasma assisted MBE, Optoelectronics and Advanced Materials - Rapid Communications, 4, 9, September 2010, pp.1289-1292 (2010).
Submitted at: Aug. 14, 2010
Accepted at: Sept. 15, 2010
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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