Abstract
A novel
analytic model which mainly considers the trapped carrier effect for the pixellated CdZnTe detector is obtained. The
simulation results indicate that the rise of the photon energy reduce s the signal modulation transfer function of the CdZnTe
crystal MTF CZT). Obvious decline of the MTF CZT w as also found only when the electron mobility lifetime product ( μ e τ e )
decreas es to the order 105 cm2 /V 106 cm2/V. The detailed analysis reveal s that the deteriorations of the MTF CZT, which
resulted from the increas e of the photon energy and the decline of the μτ , mainly attribute to the de crease of the interaction
probability and the aggravation of the carrier trapping effect. Moreover, a 40 × 40 mm 2 CdZnTe imaging system has been
established. The comparison of the presampling MTF show s that the simulation result is well consistent with the xperimental data..
Keywords
CdZnTe, Image charge method, Irradiation detector, Induced charge.
Citation
MIAO LI, SHALI XIAO, XI WANG, LING NIE, YULIN CAO, YUXIAO CHEN, LIU QIANG ZHANG, Image charge method based analytic model for imaging evaluation of pixellated CdZnTe detector, Optoelectronics and Advanced Materials - Rapid Communications, 5, 6, June 2011, pp.621-626 (2011).
Submitted at: March 29, 2011
Accepted at: June 9, 2011