"

Cookies ussage consent

I agree.

Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.

Improved structure and optical properties of GaN epilayer on Si(111) using AlN pressure modulation grown by MOCVD

FUCHENG LIU1, NAISEN YU1,2,3,* , SHIYU DU1, LIANG ZHAO1, YUNFENG WU1,*

Affiliation

  1. School of Physics and Materials Engineering, Dalian Minzu University, Dalian 116600, PR China
  2. Guangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology, Guilin 541004, PR China
  3. School of Materials Science and Engineering, Jiangsu University of Science and Technology, Zhenjiang 212000, PR China

Abstract

GaN films were grown on Si(111) substrate using AlN pressure modulation method by metal organic chemical vapor deposition (MOCVD). The films grown using AlN pressure modulation method demonstrate higher structural and optical quality than the traditional fixed AlN pressure way. It was assumed that the AlN pressure modulation layer way can effectively promote the lateral growth. It will provide a new way to improve quality for GaN film with a great potential application.

Keywords

GaN films, AlN pressure.

Citation

FUCHENG LIU, NAISEN YU, SHIYU DU, LIANG ZHAO, YUNFENG WU, Improved structure and optical properties of GaN epilayer on Si(111) using AlN pressure modulation grown by MOCVD, Optoelectronics and Advanced Materials - Rapid Communications, 16, 3-4, March-April 2022, pp.159-163 (2022).

Submitted at: July 31, 2021

Accepted at: April 7, 2022