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Improvement in internal quantum efficiency of InGaN/GaN light emitting diodes by linear grading of quantum wells

VANITA DEVI1,* , B. C. JOSHI1

Affiliation

  1. Department of Physics and Materials Science and Engineering, Jaypee Institute of Information Technology, Noida 201307, India

Abstract

Linear grading is introduced in InGaN quantum wells, to improve the internal quantum efficiency of InGaN/GaN LEDs. A constant Indium composition LED structure shows efficiency degradation at low injection current level in comparison to graded composition LED structures, with linear and inverse grading profile. This increase in efficiency can be correlated to decrease in the internal field in the active region of LED. In constant composition LED efficiency droop occurs at 75 mA/cm2, whereas in graded composition LED efficiency droop occurs at 4686 mA/cm2. The band diagram, internal quantum efficiency, radiative and non-radiative recombination rates and power spectral density are studied by using ATLAS simulation software from Ms Silvaco..

Keywords

InGaN/ GaN, Light Emitting Diode, Grading, Quantum wells, Simulation.

Citation

VANITA DEVI, B. C. JOSHI, Improvement in internal quantum efficiency of InGaN/GaN light emitting diodes by linear grading of quantum wells, Optoelectronics and Advanced Materials - Rapid Communications, 10, 1-2, January-February 2016, pp.1-4 (2016).

Submitted at: May 22, 2014

Accepted at: Feb. 10, 2016