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Improvement of amorphous silicon solar cell properties by using niobium oxide coated textured gallium-doped zinc oxide front contact

Q. QIAO1, X. Y. LIU2, K. MA2, S. D. ZHANG2, M. Y. LI2, Y. Q. WANG2,3, G. C. ZHANG2,3, Z. R. SHI2,3, G. H. LI4,3,*

Affiliation

  1. School of Internet of Things Engineering, Jiangnan University, Wuxi 214122, China
  2. Suntech Power Holdings Co., Ltd., Wuxi 214028, China
  3. Jiangsu (Suntech) Institute for Photovoltaic Technology, Wuxi 214028, China
  4. School of Science, Jiangnan University, Wuxi 214122, China

Abstract

Amorphous silicon solar cells combining a novel anti-reflection (AR) material niobium oxide (Nb2O5) and textured gallium-doped zinc oxide (ZnO:Ga) front contact etched by a new etchant adding buffer solutions have been investigated. The incorporation of Nb2O5 between ZnO:Ga and a-Si:H decreases reflectance at the interface almost over the whole useful part of spectrum range, with a side effect of slight decrease in fill factor resulted from increased ohmic loss. An improved initial efficiency of 9.32 % on aperture area of 10×10 cm2 is obtained from an a-Si:H solar cell fabricated on Nb2O5 coated textured ZnO:Ga front contact..

Keywords

Amorphous silicon, Gallium-doped zinc oxide, Niobium oxide, Anti-reflection layer.

Citation

Q. QIAO, X. Y. LIU, K. MA, S. D. ZHANG, M. Y. LI, Y. Q. WANG, G. C. ZHANG, Z. R. SHI, G. H. LI, Improvement of amorphous silicon solar cell properties by using niobium oxide coated textured gallium-doped zinc oxide front contact, Optoelectronics and Advanced Materials - Rapid Communications, 4, 10, October 2010, pp.1531-1533 (2010).

Submitted at: Sept. 30, 2010

Accepted at: Oct. 14, 2010