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JIREN YUAN1,2,* , HONGLIE SHEN2,* , FULIAN ZHONG3, XINHUA DENG1
To improve conversion efficiency for crystalline silicon solar cells, impurity photovoltaic (IPV) effect has been proposed as an approach for application of new concept solar cell. In this paper, we have carried out a numerical study on the IPV solar cells doped with tellurium. The potential of the IPV solar cell is investigated. The influence of the light trapping on the IPV solar cell performance is discussed. It is found that cell efficiency can increase by about 3.0% due to the IPV effect. In addition, light trapping has very important impact on the IPV solar cell property. A good light trapping should be required to obtain better device performance for IPV solar cells..
Impurity photovoltaic effect, Silicon solar cell, Tellurium.
JIREN YUAN, HONGLIE SHEN, FULIAN ZHONG, XINHUA DENG, Impurity photovoltaic effect in silicon solar cells doped with tellurium, Optoelectronics and Advanced Materials - Rapid Communications, 5, 8, August 2011, pp.866-869 (2011).
Submitted at: May 28, 2011
Accepted at: Aug. 10, 2011
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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