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InAs/GaSb type-II superlattice grown by MOCVD for long-wavelength infrared detection

LIWEI XIN1,2,* , TAO WANG1, JIN YANG1,2, JINGWEI WANG1, FEI YIN1, YANAN HU1,2, GUOHUA JIAO1, LICHEN ZHANG1,2, JINGZHI YIN3, ZHENYU SONG3

Affiliation

  1. State Key Laboratory of Transient Optics and Technology, Xi’an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi’an 710119, China
  2. Graduate University, Chinese Academy of Sciences, 100049 Beijing, China
  3. State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China

Abstract

Recently, many characteristics of the InAs/GaSb type-II superlattice(SL) have been investigated. However, little research work has been devoted to the source flux control, which is very important for improving the property of the SL. Based on the technology of metal organic chemical vapor deposition (MOCVD) on GaSb substrate, which has a better cost effectiveness for large-scale production, SL with excellent crystal quality is proposed in this paper. Furthermore, the importance of source flux control is analyzed by comparison of the low-temperature photoluminescence (PL) spectra of the SL grown with a special source flux control and that with a simple source flux control. The x-ray diffraction(XRD) data and the surface morphology obtained by atomic force microscopy(AFM) show that the SL designed by us has smooth surface, and the peak sense wavelength of the SL is around 10 µm..

Keywords

B1.InAs/GaSb, A3.superlattices, A3.source flux control, A3.MOCVD, A1.PL spectra.

Citation

LIWEI XIN, TAO WANG, JIN YANG, JINGWEI WANG, FEI YIN, YANAN HU, GUOHUA JIAO, LICHEN ZHANG, JINGZHI YIN, ZHENYU SONG, InAs/GaSb type-II superlattice grown by MOCVD for long-wavelength infrared detection, Optoelectronics and Advanced Materials - Rapid Communications, 5, 9, September 2011, pp.1017-1020 (2011).

Submitted at: Aug. 24, 2011

Accepted at: Sept. 15, 2011