"

Cookies ussage consent

Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.

Influence of Al doping agents nature on the physical properties of Al:ZnO films deposited by spin coating technique

F Z. GHOMRANI1,2,3, S. IFTIMIE2, N. GABOUZE3, A. SERIER4, M. SOCOL5, A. STANCULESCU5, F. SANCHEZ1, S. ANTOHE2, M. GIRTAN1,*

Affiliation

  1. LΦA Laborator y, Angers University, France
  2. Faculty of Physics, Bucharest University, Romania
  3. UDTS, Alger, Algeria
  4. LRME, Boumerdes University, Algeria
  5. National Institute of Materials Physics , Bucharest , Romania

Abstract

In this paper we present the morphological, structural , optical and electrical properties of aluminium doped zinc oxide films prepared by spin coating technique from a zinc acetate dihydrate and 2 methoxyethanol (0.5M) solution. AlCl 3 and Al(NO 3 3 were used as doping agents in different concentrations (1at%, 4at% and 6at% in starting solution). After deposition, films were dried at 100 °C and then annealed at temperatures between 400 °C and 500 °C. The characterization of deposited layer was performed by Scanning Electron Microscopy (SEM), Atomic Force Micros copy (AFM) and UV Vis spectroscopy. The results show that the optical and electrical properties of the structures strongly depend on the deposition conditions of ZnO:Al. In addition, the resistivity can be easily varied depending on ZnO:Al annealing temper atures and Al concentration..

Keywords

Sol gel process, Aluminium Zinc Oxide, Thermal treatment, Solar cells.

Citation

F Z. GHOMRANI, S. IFTIMIE, N. GABOUZE, A. SERIER, M. SOCOL, A. STANCULESCU, F. SANCHEZ, S. ANTOHE, M. GIRTAN, Influence of Al doping agents nature on the physical properties of Al:ZnO films deposited by spin coating technique, Optoelectronics and Advanced Materials - Rapid Communications, 5, 3, March 2011, pp.247-251 (2011).

Submitted at: Jan. 10, 2011

Accepted at: March 16, 2011