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Influence of d eposition pressure on the structur al, optical and electrical p roperties of Sb 2 Se 3 thin films grown by RF magnetron sputtering

FEI ZHAO1, JIAHUA TAO1, YIXIN GUO1, CHUANHE MA1, JINCHUN JIANG1,2,* , JUNHAO CHU1,2,3

Affiliation

  1. Key Laboratory of Polar Mater ials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, Shanghai 200241, China
  2. Shanghai Center for Photovoltaics, Shanghai 201201, China
  3. Shanghai Institute of Technical Physics, Chinese Academy of Scie nces, Shanghai 200083, China

Abstract

In this paper, Sb 2 Se 3 thin films were deposited on quartz substrates by radio frequency (RF) magnetron sputtering at different deposition pressures. The structural, optical and electrical properties of the Sb 2 Se 3 films were investigated by XRD, Raman, XPS, SEM, Hall Effect and UV Vis measurements. With optimized deposition pressure of 0.5 Pa, the fabricated Sb 2 Se 3 film has the highest crystallinity, the most stable valence of Se 2 and Sb 3+3+, the maximum mobility (21.54 cm 2 V 1 s 1 ) and the suitable optical band gap (1.33 eV). This study provides a guideline to prepare Sb 2 Se 3 film for photovoltaics..

Keywords

Sb 2 Se 3 thin films , M agnetron sputtering , Crystallinity, Electrical mob ility, Optical band gap.

Citation

FEI ZHAO, JIAHUA TAO, YIXIN GUO, CHUANHE MA, JINCHUN JIANG, JUNHAO CHU, Influence of d eposition pressure on the structur al, optical and electrical p roperties of Sb 2 Se 3 thin films grown by RF magnetron sputtering, Optoelectronics and Advanced Materials - Rapid Communications, 13, 5-6, May-June 2019, pp.359-363 (2019).

Submitted at: July 27, 2018

Accepted at: June 14, 2019