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Influence of frequencies on output admittance, conductance and susceptance of GaAs MESFETs

Z. HADJOUB1, K. CHEIKH1, A. DOGHMANE1,*

Affiliation

  1. Laboratoire des Semi-Conducteurs, Département de Physique, Faculté des Sciences, Université Badji Mokhtar, BP 12, Annaba, DZ-23000, Algeria

Abstract

In this paper, the influence of frequencies [10 Hz – 1 MHz] on the output admittance, conductance and susceptance of GaAs MESFETs is measured and analyzed under the following conditions: saturation regime, drain-source bias, Vds = 1 V and variable gate-source bias - 0.45 V < Vgs < - 0.2 V. It was found that, for low frequencies, a very pronounced frequency dispersion of the output admittance is observed with a maximum being obtained for Vgs = - 0.45 V corresponding to an almost pinched off channel. The conductance shows an initial sharp decrease that reach a minimum for a frequency f ≈ 100 Hz; it then increases to saturate for f ≥ 1 KHz. Whereas, for the susceptance, the minimum is reached at different frequencies and the saturation appears at a null value for f > 10 KHz. These experimental results could be used for the quantification of deep traps in the energy gap of the semi-insulating substrate.

Keywords

GaAs, MESFET, Output admittance, Conductance, Frequency.

Citation

Z. HADJOUB, K. CHEIKH, A. DOGHMANE, Influence of frequencies on output admittance, conductance and susceptance of GaAs MESFETs, Optoelectronics and Advanced Materials - Rapid Communications, 3, 4, April 2009, pp.360-363 (2009).

Submitted at: April 1, 2009

Accepted at: April 23, 2009