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YUNKAI QI1, SHUMIN YANG1, JIANJUN GU1,* , GUOLIANG ZHAO1, HUIYUAN SUN2
Al doped ZnO films have been prepared using different Ar:O2 ratios and annealing conditions on glass substrates by dc reactive magnetron co sputte ring. The results of magnetic measurements show that different oxygen partial pressures and annealing temperatures have great influence on the magnetism of doped ZnO thin films. The fact that only the films prepared at an Ar:O2 ratio of 1:1 and annealed at 200 oC in vacuum show clear room temperature ferromagnetism which disappears after anneal ed at 500 o C in vacuum indicates that the ferromagnetism may be related to internal lattice stress. These ferromagnetic films have been annealed at 200 oC in air subsequently and show lower coercivity and enhanced saturation magnetization, which may be attributed to the annealing in air causing more interstitial Al atoms to convert into substitutional Al ions, and consequently i ncreasing the charge transfer between the Al and the ZnO matrix , leading to increased magnetism..
Diluted magnetic semiconductor, Oxygen partial pressure, Anneal, Ferromagnetism.
YUNKAI QI, SHUMIN YANG, JIANJUN GU, GUOLIANG ZHAO, HUIYUAN SUN, Influence of oxygen partial pressure and annealing on magnetic properties of Al doped ZnO thin films, Optoelectronics and Advanced Materials - Rapid Communications, 7, 5-6, May-June 2013, pp.420-424 (2013).
Submitted at: May 6, 2012
Accepted at: June 12, 2013
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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